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- Manufacturer No：IRFR4620PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR4620PBF
- SKU：2692256
- Description：Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
User Guide
User Guide
IRFR4620PBF Details
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
IRFR4620PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Packaging: Tube
- Termination: SMD/SMT
- Drain to Source Breakdown Voltage: 200V
- Published: 2009
- Element Configuration: Single
- Part Status: Discontinued
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Length: 6.73mm
- Continuous Drain Current (ID): 24A
- Width: 6.22mm
- Nominal Vgs: 5 V
- Vgs(th) (Max) @ Id: 5V @ 100μA
- Current - Continuous Drain (Id) @ 25°C: 24A Tc
- Turn On Delay Time: 13.4 ns
- Fall Time (Typ): 14.8 ns
- Turn-Off Delay Time: 25.4 ns
- Rds On (Max) @ Id, Vgs: 78m Ω @ 15A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Threshold Voltage: 5V
- Number of Pins: 3
- REACH SVHC: No SVHC
- Dual Supply Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Factory Lead Time: 19 Weeks
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Series: HEXFET?
- Height: 2.3876mm
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Resistance: 78mOhm
- Power Dissipation: 144W
- Power Dissipation-Max: 144W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
- Rise Time: 22.4ns
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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