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- Manufacturer No：IR11662SPBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IR11662SPBF
- SKU：2692719
- Description：Tube IR11662SPBF Low-Side 2010 gate driver 21ns 10ns -25C~125C TJ 1A 4A 2V 2.15V
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User Guide
IR11662SPBF Details
Tube IR11662SPBF Low-Side 2010 gate driver 21ns 10ns -25C~125C TJ 1A 4A 2V 2.15V
IR11662SPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- High Side Driver: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Published: 2010
- Supply Voltage: 15V
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Width: 3.9mm
- Length: 4.9mm
- JESD-30 Code: R-PDSO-G8
- Gate Type: N-Channel MOSFET
- Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER
- Turn Off Time: 0.075 μs
- Logic Voltage - VIL, VIH: 2V 2.15V
- Voltage - Supply: 11.4V~18V
- Rise / Fall Time (Typ): 21ns 10ns
- Mounting Type: Surface Mount
- Number of Drivers: 1
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 8
- Packaging: Tube
- Terminal Form: GULL WING
- Channel Type: Single
- Part Status: Discontinued
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Output Peak Current Limit-Nom: 4A
- Input Type: Non-Inverting
- Subcategory: MOSFET Drivers
- Driven Configuration: Low-Side
- Operating Temperature: -25°C~125°C TJ
- Turn On Time: 0.095 μs
- Series: Advanced Smart Rectifier?
- Current - Peak Output (Source, Sink): 1A 4A
- Base Part Number: IR11662SPBF
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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