IRGB4064DPBFInfineon
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    • Manufacturer No：
      IRGB4064DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
    • SKU：
      2692933
    • Description：
      IGBT Trench 600 V 20 A 101 W Through Hole TO-220AB
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    • Manufacturer No：
      IRGB4064DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRGB4064DPBF
    • SKU：
      2692933
    • Description：
      IGBT Trench 600 V 20 A 101 W Through Hole TO-220AB

    User Guide

    User Guide

    IRGB4064DPBF Details

    IGBT Trench 600 V 20 A 101 W Through Hole TO-220AB

    IRGB4064DPBF Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Published: 2006
    • Element Configuration: Single
    • Collector Emitter Breakdown Voltage: 600V
    • Operating Temperature: -55°C~175°C TJ
    • Current - Collector Pulsed (Icm): 40A
    • Collector Emitter Saturation Voltage: 1.6V
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Subcategory: Insulated Gate BIP Transistors
    • Turn On Delay Time: 27 ns
    • Width: 4.82mm
    • Turn On Time: 43 ns
    • Power Dissipation: 101W
    • Reverse Recovery Time: 62 ns
    • Turn-Off Delay Time: 79 ns
    • Gate Charge: 21nC
    • Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
    • Switching Energy: 29μJ (on), 200μJ (off)
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Max Collector Current: 20A
    • Gate-Emitter Thr Voltage-Max: 6.5V
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Rise Time: 15 ns
    • Transistor Application: POWER CONTROL
    • Height: 9.02mm
    • Weight: 6.000006g
    • IGBT Type: Trench
    • Max Power Dissipation: 101W
    • Length: 10.66mm
    • Factory Lead Time: 99 Weeks
    • Collector Emitter Voltage (VCEO): 1.91V
    • Turn Off Time-Nom (toff): 131 ns
    • Td (on/off) @ 25°C: 27ns/79ns
    • Test Condition: 400V, 10A, 22 Ω, 15V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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