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- Manufacturer No：IS62WV51216BLL-55BLI
- Manufacturer：ISSI
- Category：Memory
- Datasheet：IS62WV51216BLL-55BLI
- SKU：2693321
- Description：e1 Surface Mount Tray SRAM - Asynchronous ic memory 18MHz 55ns 7.3mm 5mA
User Guide
User Guide
IS62WV51216BLL-55BLI Details
e1 Surface Mount Tray SRAM - Asynchronous ic memory 18MHz 55ns 7.3mm 5mA
IS62WV51216BLL-55BLI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 10
- Supply Voltage: 3V
- Number of Terminations: 48
- Pin Count: 48
- Terminal Position: BOTTOM
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Memory Format: SRAM
- Word Size: 16b
- Sync/Async: Asynchronous
- Access Time (Max): 55 ns
- Terminal Pitch: 0.75mm
- Length: 8.8mm
- Address Bus Width: 19b
- Voltage - Supply: 2.5V~3.6V
- Memory Size: 8Mb 512K x 16
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Pbfree Code: yes
- Surface Mount: YES
- Factory Lead Time: 8 Weeks
- Packaging: Tray
- Supply Voltage-Min (Vsup): 2.5V
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Temperature: -40°C~85°C TA
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Nominal Supply Current: 5mA
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Width: 7.3mm
- Height: 900μm
- I/O Type: COMMON
- Technology: SRAM - Asynchronous
- Write Cycle Time - Word, Page: 55ns
- Max Frequency: 18MHz
- Standby Current-Max: 0.00002A
- Package / Case: 48-TFBGA
- Density: 8 Mb
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