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- Manufacturer No：SI4925DDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4925DDY-T1-GE3
- SKU：269415
- Description：MOSFET 2P-CH 30V 8A 8-SOIC
User Guide
User Guide
SI4925DDY-T1-GE3 Details
MOSFET 2P-CH 30V 8A 8-SOIC
SI4925DDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Published: 2015
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Max Power Dissipation: 5W
- Operating Temperature: -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C: 8A
- Transistor Application: SWITCHING
- Turn On Delay Time: 10 ns
- Rise Time: 35 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- FET Type: 2 P-Channel (Dual)
- Resistance: 29mOhm
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
- Base Part Number: SI4925
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Power Dissipation: 5W
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Height: 1.75mm
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time: 45 ns
- Fall Time (Typ): 16 ns
- Drain to Source Breakdown Voltage: -30V
- Threshold Voltage: -1V
- Weight: 186.993455mg
- Nominal Vgs: -3 V
- Continuous Drain Current (ID): -7.3A
- Rds On (Max) @ Id, Vgs: 29m Ω @ 7.3A, 10V
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