IRF7424TRPBFInfineon
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    Inventory:31807
    • Qty Unit Price price
    • 1 $2034.383 $2034.383
    • 10 $2014.24 $20142.4
    • 100 $1994.297 $199429.7
    • 1000 $1974.551 $1974551
    • 10000 $1955 $19550000

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    • Manufacturer No：
      IRF7424TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7424TRPBF
    • SKU：
      2694823
    • Description：
      MOSFET P-CH 30V 11A 8-SOIC

    User Guide

    User Guide

    IRF7424TRPBF Details

    MOSFET P-CH 30V 11A 8-SOIC

    IRF7424TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Termination: SMD/SMT
    • Max Junction Temperature (Tj): 150°C
    • Element Configuration: Single
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Height: 1.75mm
    • Vgs (Max): ±20V
    • Power Dissipation: 2.5W
    • Turn On Delay Time: 15 ns
    • Turn-Off Delay Time: 150 ns
    • Series: HEXFET?
    • Threshold Voltage: -2.5V
    • Voltage - Rated DC: -30V
    • Rise Time: 23 ns
    • Length: 4.9784mm
    • Width: 4.05mm
    • Current - Continuous Drain (Id) @ 25°C: 11A Ta
    • Fall Time (Typ): 76 ns
    • Continuous Drain Current (ID): -11A
    • Nominal Vgs: -2.5 V
    • Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Subcategory: Other Transistors
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • FET Type: P-Channel
    • Recovery Time: 60 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Drain to Source Breakdown Voltage: -30V
    • Dual Supply Voltage: -30V
    • Power Dissipation-Max: 2.5W Ta
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Forward Voltage: -1.2V
    • Row Spacing: 6.3 mm
    • Resistance: 13.5mOhm
    • Current Rating: -11A
    • Rds On (Max) @ Id, Vgs: 13.5m Ω @ 11A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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