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IRFS3307ZPBF123
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IRFS3307ZPBF
  • Manufacturer No:
    IRFS3307ZPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFS3307ZPBF
  • SKU:
    2694951
  • Description:
    MOSFET N-CH 75V 120A D2PAK

IRFS3307ZPBF Details

MOSFET N-CH 75V 120A D2PAK

IRFS3307ZPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Voltage - Rated DC: 75V
  • Dual Supply Voltage: 75V
  • Part Status: Discontinued
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Vgs (Max): ±20V
  • Length: 6.73mm
  • Turn On Delay Time: 15 ns
  • Continuous Drain Current (ID): 120A
  • Width: 6.22mm
  • Nominal Vgs: 4 V
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Power Dissipation: 230W
  • Vgs(th) (Max) @ Id: 4V @ 150μA
  • Rise Time: 64ns
  • Rds On (Max) @ Id, Vgs: 5.8m Ω @ 75A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Radiation Hardening: No
  • Packaging: Tube
  • Termination: SMD/SMT
  • Published: 2006
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 75V
  • Gate to Source Voltage (Vgs): 20V
  • Height: 2.39mm
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Recovery Time: 50 ns
  • Series: HEXFET?
  • Current Rating: 120A
  • Fall Time (Typ): 65 ns
  • Turn-Off Delay Time: 38 ns
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Power Dissipation-Max: 230W Tc
  • Resistance: 5.8mOhm
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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