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- Manufacturer No：IRF3707ZPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF3707ZPBF
- SKU：2695687
- Description：MOSFET N-CH 30V 59A TO-220AB
User Guide
User Guide
IRF3707ZPBF Details
MOSFET N-CH 30V 59A TO-220AB
IRF3707ZPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Threshold Voltage: 1.8V
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 30V
- Dual Supply Voltage: 30V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: HEXFET?
- Fall Time (Typ): 3.6 ns
- Nominal Vgs: 1.8 V
- Width: 4.69mm
- Power Dissipation: 57W
- Continuous Drain Current (ID): 59A
- Resistance: 9.5Ohm
- Length: 10.5156mm
- Current - Continuous Drain (Id) @ 25°C: 59A Tc
- Vgs(th) (Max) @ Id: 2.25V @ 25μA
- Input Capacitance: 1.21nF
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- REACH SVHC: No SVHC
- Max Operating Temperature: 175°C
- Voltage - Rated DC: 30V
- Drain to Source Breakdown Voltage: 30V
- Published: 2003
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Supplier Device Package: TO-220AB
- Turn-Off Delay Time: 12 ns
- Recovery Time: 21 ns
- Turn On Delay Time: 9.8 ns
- Rise Time: 41ns
- Height: 8.763mm
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Current Rating: 59A
- Drain to Source Resistance: 12.5mOhm
- Power Dissipation-Max: 57W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
- Rds On Max: 9.5 mΩ
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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