IRF640NPBFInfineon
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    IRF640NPBF123
    Inventory:61810
    • Qty Unit Price price
    • 1 $1700.35 $1700.35
    • 10 $1683.514 $16835.14
    • 100 $1666.845 $166684.5
    • 1000 $1650.341 $1650341
    • 10000 $1634 $16340000

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    IRF640NPBF
    • Manufacturer No：
      IRF640NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF640NPBF
    • SKU：
      2695842
    • Description：
      MOSFET N-CH 200V 18A TO-220AB

    User Guide

    User Guide

    IRF640NPBF Details

    MOSFET N-CH 200V 18A TO-220AB

    IRF640NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Threshold Voltage: 2V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Current Rating: 18A
    • Resistance: 150mOhm
    • Width: 4.826mm
    • Height: 19.8mm
    • Length: 10.668mm
    • Lead Free: Contains Lead, Lead Free
    • Power Dissipation-Max: 150W Tc
    • Rise Time: 19ns
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Rds On (Max) @ Id, Vgs: 150m Ω @ 11A, 10V
    • Avalanche Energy Rating (Eas): 247 mJ
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Power Dissipation: 150W
    • Technology: MOSFET (Metal Oxide)
    • Published: 1999
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 10 ns
    • Peak Reflow Temperature (Cel): 250
    • Continuous Drain Current (ID): 18A
    • Series: HEXFET?
    • Fall Time (Typ): 5.5 ns
    • Turn-Off Delay Time: 23 ns
    • Nominal Vgs: 4 V
    • Pulsed Drain Current-Max (IDM): 72A
    • Current - Continuous Drain (Id) @ 25°C: 18A Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
    • Recovery Time: 241 ns
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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