IRFP140NPBFInfineon
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    • Manufacturer No：
      IRFP140NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      2696676
    • Description：
      In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon
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    • Qty Unit Price price
    • 1 $2.156 $2.156
    • 10 $2.134 $21.34
    • 100 $2.112 $211.2
    • 1000 $2.091 $2091
    • 10000 $2.07 $20700

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    • Manufacturer No：
      IRFP140NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFP140NPBF
    • SKU：
      2696676
    • Description：
      In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon

    User Guide

    User Guide

    IRFP140NPBF Details

    In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon

    IRFP140NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Factory Lead Time: 12 Weeks
    • Number of Pins: 3
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-247-3
    • Length: 15.87mm
    • Recovery Time: 250 ns
    • Current Rating: 27A
    • JEDEC-95 Code: TO-247AC
    • Height: 20.7mm
    • Lead Free: Contains Lead, Lead Free
    • Rise Time: 39 ns
    • Turn On Delay Time: 8.2 ns
    • Current - Continuous Drain (Id) @ 25°C: 33A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
    • Rds On (Max) @ Id, Vgs: 52m Ω @ 16A, 10V
    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Additional Feature: AVALANCHE RATED
    • Continuous Drain Current (ID): 33A
    • Fall Time (Typ): 33 ns
    • Nominal Vgs: 4 V
    • Width: 5.3086mm
    • Turn-Off Delay Time: 44 ns
    • Resistance: 52mOhm
    • Power Dissipation-Max: 140W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
    • Power Dissipation: 94W
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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