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Inventory:16154
  • Qty Unit Price price
  • 1 $2340.321 $2340.321
  • 10 $2317.149 $23171.49
  • 100 $2294.206 $229420.6
  • 1000 $2271.491 $2271491
  • 10000 $2249 $22490000

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  • Manufacturer No:
    IRFR4615TRLPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR4615TRLPBF
  • SKU:
    2697513
  • Description:
    MOSFET N-CH 150V 33A DPAK

IRFR4615TRLPBF Details

MOSFET N-CH 150V 33A DPAK

IRFR4615TRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 150V
  • Max Junction Temperature (Tj): 175°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Turn On Delay Time: 15 ns
  • Rise Time: 35 ns
  • Width: 6.22mm
  • JEDEC-95 Code: TO-252AA
  • Length: 6.7056mm
  • Vgs(th) (Max) @ Id: 5V @ 100μA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Drain-source On Resistance-Max: 0.042Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Threshold Voltage: 5V
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Published: 2004
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Turn-Off Delay Time: 25 ns
  • Fall Time (Typ): 20 ns
  • Series: HEXFET?
  • Continuous Drain Current (ID): 33A
  • Nominal Vgs: 5 V
  • Height: 2.52mm
  • Power Dissipation: 144W
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Power Dissipation-Max: 144W Tc
  • Rds On (Max) @ Id, Vgs: 42m Ω @ 21A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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