IRFZ48NPBFInfineon
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    Inventory:2638
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    • 1 $1849.156 $1849.156
    • 10 $1830.847 $18308.47
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    • Manufacturer No：
      IRFZ48NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFZ48NPBF
    • SKU：
      2697525
    • Description：
      MOSFET N-CH 55V 64A TO-220AB

    User Guide

    User Guide

    IRFZ48NPBF Details

    MOSFET N-CH 55V 64A TO-220AB

    IRFZ48NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Lead Pitch: 2.54mm
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Voltage - Rated DC: 55V
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 50 ns
    • Peak Reflow Temperature (Cel): 250
    • Recovery Time: 100 ns
    • Nominal Vgs: 4 V
    • Current Rating: 64A
    • Length: 10.54mm
    • Width: 4.69mm
    • Height: 8.77mm
    • Current - Continuous Drain (Id) @ 25°C: 64A Tc
    • Power Dissipation: 94W
    • Rds On (Max) @ Id, Vgs: 14m Ω @ 32A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2001
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Turn On Delay Time: 12 ns
    • Series: HEXFET?
    • Turn-Off Delay Time: 34 ns
    • Continuous Drain Current (ID): 64A
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Rise Time: 78 ns
    • Power Dissipation-Max: 130W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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