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- Manufacturer No：IR21064PBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IR21064PBF
- SKU：2697747
- Description：Tube IR21064PBF High-Side or Low-Side 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1.6W
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User Guide
IR21064PBF Details
Tube IR21064PBF High-Side or Low-Side 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1.6W
IR21064PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Outputs: 2
- Mount: Through Hole
- ECCN Code: EAR99
- High Side Driver: YES
- Terminal Position: DUAL
- Technology: CMOS
- Number of Pins: 14
- Supply Voltage: 15V
- High Side Voltage - Max (Bootstrap): 600V
- Part Status: Last Time Buy
- Height: 4.4mm
- Max Output Current: 350mA
- Published: 1996
- Max Power Dissipation: 1.6W
- Package / Case: 14-DIP (0.300, 7.62mm)
- Subcategory: MOSFET Drivers
- Turn On Delay Time: 300 ns
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V~20V
- Driven Configuration: High-Side or Low-Side
- Current - Peak Output (Source, Sink): 200mA 350mA
- Additional Feature: FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- Logic Voltage - VIL, VIH: 0.8V 2.9V
- Length: 20.1676mm
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Functions: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Terminations: 14
- Factory Lead Time: 18 Weeks
- Power Supplies: 15V
- Output Voltage: 20V
- Output Current: 200mA
- Input Type: Non-Inverting
- Operating Temperature: -40°C~150°C TJ
- Power Dissipation: 1.6W
- Channel Type: Independent
- Width: 7.11mm
- Propagation Delay: 300 ns
- Fall Time (Typ): 80 ns
- Output Peak Current Limit-Nom: 0.35A
- Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER
- Turn-Off Delay Time: 280 ns
- Turn On Time: 0.3 μs
- Rise Time: 220ns
- Rise / Fall Time (Typ): 150ns 50ns
- Base Part Number: IR21064PBF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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