IRFB31N20DPBFInfineon
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    • Manufacturer No：
      IRFB31N20DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      2697906
    • Description：
      Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V
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    • Manufacturer No：
      IRFB31N20DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB31N20DPBF
    • SKU：
      2697906
    • Description：
      Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V

    User Guide

    User Guide

    IRFB31N20DPBF Details

    Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V

    IRFB31N20DPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Factory Lead Time: 14 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • Power Dissipation: 200W
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 10 ns
    • Vgs (Max): ±30V
    • Recovery Time: 300 ns
    • Current Rating: 31A
    • Turn-Off Delay Time: 26 ns
    • Lead Free: Contains Lead, Lead Free
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Height: 8.763mm
    • Length: 10.5156mm
    • Avalanche Energy Rating (Eas): 420 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
    • Rds On (Max) @ Id, Vgs: 82m Ω @ 18A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Published: 1998
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Peak Reflow Temperature (Cel): 250
    • Series: HEXFET?
    • Turn On Delay Time: 16 ns
    • Continuous Drain Current (ID): 31A
    • Rise Time: 38 ns
    • Resistance: 82mOhm
    • Width: 4.69mm
    • Nominal Vgs: 5.5 V
    • Current - Continuous Drain (Id) @ 25°C: 31A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
    • Power Dissipation-Max: 3.1W Ta 200W Tc
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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