Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:1790
- Qty Unit Price price
- 1 $145.688 $145.688
- 10 $144.245 $1442.45
- 100 $142.816 $14281.6
- 1000 $141.401 $141401
- 10000 $140 $1400000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI7326DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7326DN-T1-GE3
- SKU：269792
- Description：MOSFET 30V 10A 3.5W 19.5mohm @ 10V
User Guide
User Guide
SI7326DN-T1-GE3 Details
MOSFET 30V 10A 3.5W 19.5mohm @ 10V
SI7326DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Contact Plating: Tin
- Pin Count: 8
- Published: 2016
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Continuous Drain Current (ID): 10A
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Length: 3.3mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 12 ns
- Turn On Delay Time: 8 ns
- Turn-Off Delay Time: 32 ns
- Height: 1.04mm
- Power Dissipation-Max: 1.5W Ta
- Vgs(th) (Max) @ Id: 1.8V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 6.5A Ta
- Rds On (Max) @ Id, Vgs: 19.5m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Width: 3.3mm
- Fall Time (Typ): 12 ns
- Drain Current-Max (Abs) (ID): 6.5A
- Series: TrenchFET?
- Vgs (Max): ±25V
- Nominal Vgs: 1.8 V
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-XDSO-C5
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Search for similar products
SI7326DN-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI7326DN-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
