IRG4PF50WPBFInfineon
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    • Manufacturer No：
      IRG4PF50WPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      2698389
    • Description：
      IGBT 900V 51A 200W TO247AC
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    • Manufacturer No：
      IRG4PF50WPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRG4PF50WPBF
    • SKU：
      2698389
    • Description：
      IGBT 900V 51A 200W TO247AC

    User Guide

    User Guide

    IRG4PF50WPBF Details

    IGBT 900V 51A 200W TO247AC

    IRG4PF50WPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Element Configuration: Dual
    • Input Type: Standard
    • Terminal Position: SINGLE
    • Gate-Emitter Thr Voltage-Max: 6V
    • Part Status: Last Time Buy
    • Operating Temperature: -55°C~150°C TJ
    • Power Dissipation: 200W
    • Polarity/Channel Type: N-CHANNEL
    • Package / Case: TO-247-3
    • Height: 20.3mm
    • Length: 15.875mm
    • Subcategory: Insulated Gate BIP Transistors
    • Rise Time: 26 ns
    • Turn On Delay Time: 29 ns
    • Weight: 38.000013g
    • Turn On Time: 54 ns
    • Max Collector Current: 51A
    • Current - Collector Pulsed (Icm): 204A
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
    • Td (on/off) @ 25°C: 29ns/110ns
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Published: 2004
    • Collector Emitter Voltage (VCEO): 2.7V
    • Max Power Dissipation: 200W
    • Width: 5.3mm
    • Collector Emitter Saturation Voltage: 2.25V
    • Case Connection: COLLECTOR
    • Collector Emitter Breakdown Voltage: 900V
    • Transistor Application: POWER CONTROL
    • Turn-Off Delay Time: 110 ns
    • JEDEC-95 Code: TO-247AC
    • Fall Time-Max (tf): 220 ns
    • Additional Feature: LOW CONDUCTION LOSS
    • Current Rating: 51A
    • Turn Off Time-Nom (toff): 370 ns
    • Gate Charge: 160nC
    • Switching Energy: 190μJ (on), 1.06mJ (off)
    • Test Condition: 720V, 28A, 5 Ω, 15V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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