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- Manufacturer No：IR2010SPBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IR2010SPBF
- SKU：2698833
- Description：Tube IR2010SPBF Half-Bridge 1996 gate driver 20ns -40C~150C TJ 3A 3A 1.25W
User Guide
User Guide
IR2010SPBF Details
Tube IR2010SPBF Half-Bridge 1996 gate driver 20ns -40C~150C TJ 3A 3A 1.25W
IR2010SPBF Specification Parameters
- Part Status: Active
- Number of Outputs: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- High Side Driver: YES
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Max Output Current: 3A
- Output Peak Current Limit-Nom: 3A
- Number of Terminations: 16
- Technology: CMOS
- High Side Voltage - Max (Bootstrap): 200V
- Terminal Finish: Tin (Sn)
- Power Supplies: 15V
- Input Type: Non-Inverting
- Height: 2.35mm
- Package / Case: 16-SOIC (0.295, 7.50mm Width)
- Turn-Off Delay Time: 15 ns
- Published: 1996
- Power Dissipation: 1.25W
- Subcategory: MOSFET Drivers
- Length: 10.4902mm
- Voltage - Supply: 10V~20V
- Nominal Supply Current: 230μA
- Current - Peak Output (Source, Sink): 3A 3A
- Logic Voltage - VIL, VIH: 6V 9.5V
- Turn Off Time: 0.105 μs
- Base Part Number: IR2010SPBF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Terminal Position: DUAL
- Packaging: Tube
- Output Current: 3A
- Number of Pins: 16
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 15V
- Output Voltage: 20V
- Operating Temperature: -40°C~150°C TJ
- Fall Time (Typ): 25 ns
- Turn On Delay Time: 15 ns
- Rise Time: 20 ns
- Max Power Dissipation: 1.25W
- Channel Type: Independent
- Driven Configuration: Half-Bridge
- Gate Type: IGBT, N-Channel MOSFET
- Width: 7.5946mm
- Max Supply Current: 230μA
- Propagation Delay: 135 ns
- Turn On Time: 0.135 μs
- Rise / Fall Time (Typ): 10ns, 15ns
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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