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- Manufacturer No：IRF5305STRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF5305STRLPBF
- SKU：2699358
- Description：Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
User Guide
User Guide
IRF5305STRLPBF Details
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
IRF5305STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 55V
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 60mOhm
- Turn On Delay Time: 14 ns
- Recovery Time: 110 ns
- Power Dissipation: 110W
- Turn-Off Delay Time: 39 ns
- Fall Time (Typ): 63 ns
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 31A Tc
- Voltage - Rated DC: -55V
- Avalanche Energy Rating (Eas): 280 mJ
- Power Dissipation-Max: 3.8W Ta 110W Tc
- Additional Feature: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
- Current Rating: -31A
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 175°C
- Published: 2005
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Case Connection: DRAIN
- FET Type: P-Channel
- Series: HEXFET?
- Width: 9.65mm
- JEDEC-95 Code: TO-252
- Length: 10.668mm
- Lead Free: Contains Lead, Lead Free
- Threshold Voltage: -4V
- Rise Time: 66 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Drain to Source Breakdown Voltage: -55V
- Dual Supply Voltage: -55V
- Nominal Vgs: -4 V
- Height: 5.084mm
- Continuous Drain Current (ID): -31A
- Rds On (Max) @ Id, Vgs: 60m Ω @ 16A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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