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IRFP4310ZPBF123
  • Manufacturer No:
    IRFP4310ZPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2699787
  • Description:
    Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
  • Quantity:
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Inventory:490
  • Qty Unit Price price
  • 1 $6729.588 $6729.588
  • 10 $6662.958 $66629.58
  • 100 $6596.988 $659698.8
  • 1000 $6531.671 $6531671
  • 10000 $6467 $64670000

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IRFP4310ZPBF
  • Manufacturer No:
    IRFP4310ZPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP4310ZPBF
  • SKU:
    2699787
  • Description:
    Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

IRFP4310ZPBF Details

Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

IRFP4310ZPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Dual Supply Voltage: 100V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-247-3
  • Rise Time: 60 ns
  • Resistance: 6mOhm
  • Turn-Off Delay Time: 55 ns
  • Nominal Vgs: 4 V
  • Width: 5.3086mm
  • Power Dissipation: 280W
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Continuous Drain Current (ID): 134A
  • Power Dissipation-Max: 280W Tc
  • Rds On (Max) @ Id, Vgs: 6m Ω @ 75A, 10V
  • RoHS Status: ROHS3 Compliant
  • Packaging: Bulk
  • Mount: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Pins: 3
  • Drain to Source Breakdown Voltage: 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2004
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Turn On Delay Time: 20 ns
  • Recovery Time: 40 ns
  • Series: HEXFET?
  • Length: 15.87mm
  • JEDEC-95 Code: TO-247AC
  • Height: 20.7mm
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Fall Time (Typ): 57 ns
  • Vgs(th) (Max) @ Id: 4V @ 150μA
  • Pulsed Drain Current-Max (IDM): 560A
  • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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