IRF7811AVTRInfineon
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    • Manufacturer No：
      IRF7811AVTR
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7811AVTR
    • SKU：
      2699854
    • Description：
      MOSFET N-CH 30V 10.8A 8-SOIC

    User Guide

    User Guide

    IRF7811AVTR Details

    MOSFET N-CH 30V 10.8A 8-SOIC

    IRF7811AVTR Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • RoHS Status: Non-RoHS Compliant
    • JESD-609 Code: e3
    • Number of Terminations: 8
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Series: HEXFET?
    • HTS Code: 8541.29.00.95
    • JEDEC-95 Code: MS-012AA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
    • Rds On (Max) @ Id, Vgs: 14m Ω @ 15A, 4.5V
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Part Status: Obsolete
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2005
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • JESD-30 Code: R-PDSO-G8
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Power Dissipation-Max: 2.5W Ta
    • Drain Current-Max (Abs) (ID): 10.8A
    • Current - Continuous Drain (Id) @ 25°C: 10.8A Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 1801pF @ 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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