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- Manufacturer No：IRFH5301TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFH5301TRPBF
- SKU：2699925
- Description：INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
User Guide
User Guide
IRFH5301TRPBF Details
INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
IRFH5301TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Number of Pins: 8
- REACH SVHC: No SVHC
- Threshold Voltage: 1.8V
- Width: 5mm
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Height: 850μm
- Series: HEXFET?
- Turn On Delay Time: 21 ns
- Package / Case: 8-PowerVDFN
- Nominal Vgs: 1.8 V
- Rise Time: 78ns
- Resistance: 1.85mOhm
- Drain to Source Resistance: 1.55mOhm
- Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
- Input Capacitance: 5.114nF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 12 Weeks
- Max Operating Temperature: 150°C
- Published: 2009
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Length: 6mm
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 100A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 22 ns
- Fall Time (Typ): 23 ns
- Power Dissipation: 110W
- Vgs(th) (Max) @ Id: 2.35V @ 100μA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Supplier Device Package: PQFN (5x6) Single Die
- Rds On Max: 1.85 mΩ
- Current - Continuous Drain (Id) @ 25°C: 35A Ta 100A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5114pF @ 15V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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