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- Manufacturer No：IRFH8202TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFH8202TRPBF
- SKU：2700441
- Description：MOSFET N-CH 25V 100A PQFN
User Guide
User Guide
IRFH8202TRPBF Details
MOSFET N-CH 25V 100A PQFN
IRFH8202TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 25V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 30 ns
- Turn On Delay Time: 28 ns
- Power Dissipation: 3.6W
- Series: HEXFET?, StrongIRFET?
- Vgs(th) (Max) @ Id: 2.35V @ 150μA
- Rds On (Max) @ Id, Vgs: 1.05m Ω @ 50A, 10V
- Current - Continuous Drain (Id) @ 25°C: 47A Ta 100A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 8
- Published: 2013
- Threshold Voltage: 1.8V
- Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 100A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: 8-PowerTDFN
- Fall Time (Typ): 19 ns
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Rise Time: 46ns
- Power Dissipation-Max: 3.6W Ta 160W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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