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  • Manufacturer No:
    IRGS8B60KPBF
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2700797
  • Description:
    IGBT 600V 28A 167W D2PAK
  • Quantity:
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Inventory:2250
  • Qty Unit Price price
  • 1 $0.703 $0.703
  • 10 $0.696 $6.96
  • 100 $0.689 $68.9
  • 1000 $0.682 $682
  • 10000 $0.6745 $6745

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  • Manufacturer No:
    IRGS8B60KPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    IRGS8B60KPBF
  • SKU:
    2700797
  • Description:
    IGBT 600V 28A 167W D2PAK

IRGS8B60KPBF Details

IGBT 600V 28A 167W D2PAK

IRGS8B60KPBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 13 Weeks
  • Element Configuration: Single
  • Voltage - Rated DC: 600V
  • Gate-Emitter Voltage-Max: 20V
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Collector Emitter Saturation Voltage: 2.2V
  • Height: 4.572mm
  • Width: 9.65mm
  • Rise Time: 22 ns
  • Max Collector Current: 28A
  • Length: 10.668mm
  • Transistor Application: MOTOR CONTROL
  • Turn Off Time-Nom (toff): 220 ns
  • Power Dissipation: 167W
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Switching Energy: 160μJ (on), 160μJ (off)
  • Number of Terminations: 2
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Gate-Emitter Thr Voltage-Max: 5.5V
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Collector Emitter Breakdown Voltage: 600V
  • Published: 2004
  • JESD-30 Code: R-PSSO-G2
  • Collector Emitter Voltage (VCEO): 2.2V
  • Polarity/Channel Type: N-CHANNEL
  • Case Connection: COLLECTOR
  • Subcategory: Insulated Gate BIP Transistors
  • Current Rating: 28A
  • Current - Collector Pulsed (Icm): 34A
  • IGBT Type: NPT
  • Turn On Time: 43 ns
  • Fall Time-Max (tf): 56 ns
  • Max Power Dissipation: 167W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Test Condition: 400V, 8A, 50 Ω, 15V
  • Base Part Number: IRGS8B60KPBF

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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