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- Manufacturer No：IR2109PBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IR2109PBF
- SKU：2701314
- Description：Tube IR2109PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1W
User Guide
User Guide
IR2109PBF Details
Tube IR2109PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1W
IR2109PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Functions: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Factory Lead Time: 12 Weeks
- Technology: CMOS
- Max Power Dissipation: 1W
- Supply Voltage: 15V
- High Side Voltage - Max (Bootstrap): 600V
- Max Output Current: 350mA
- Channel Type: Synchronous
- Package / Case: 8-DIP (0.300, 7.62mm)
- Turn On Delay Time: 70 ns
- Width: 7.11mm
- Driven Configuration: Half-Bridge
- Nominal Supply Current: 1.6mA
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V~20V
- Height: 4.9276mm
- Length: 10.8966mm
- Additional Feature: FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- Logic Voltage - VIL, VIH: 0.8V 2.9V
- Rise / Fall Time (Typ): 150ns, 50ns
- RoHS Status: ROHS3 Compliant
- Number of Outputs: 2
- Mount: Through Hole
- ECCN Code: EAR99
- High Side Driver: YES
- Number of Pins: 8
- Terminal Position: DUAL
- Packaging: Tube
- REACH SVHC: No SVHC
- Power Dissipation: 1W
- Power Supplies: 15V
- Input Type: Non-Inverting
- Output Current: 120mA
- Operating Temperature: -40°C~150°C TJ
- Published: 1996
- Turn-Off Delay Time: 200 ns
- Subcategory: MOSFET Drivers
- Fall Time (Typ): 80 ns
- Max Supply Current: 1.6mA
- Output Peak Current Limit-Nom: 0.35A
- Rise Time: 220 ns
- Type: Integrated Circuit (IC)
- Current - Peak Output (Source, Sink): 200mA 350mA
- Turn On Time: 0.95 μs
- Propagation Delay: 950 ns
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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