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- Manufacturer No：IR25604SPBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IR25604SPBF
- SKU：2701435
- Description：Tube IR25604SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
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IR25604SPBF Details
Tube IR25604SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
IR25604SPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 8
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Supply Voltage: 15V
- High Side Voltage - Max (Bootstrap): 600V
- Width: 4mm
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Output Current: 200mA
- Height: 1.5mm
- Nominal Supply Current: 120mA
- Turn On Delay Time: 30 ns
- Max Power Dissipation: 625mW
- Channel Type: Independent
- Propagation Delay: 300 ns
- Fall Time (Typ): 80 ns
- Voltage - Supply: 10V~20V
- Current - Peak Output (Source, Sink): 200mA 350mA
- Logic Voltage - VIL, VIH: 0.8V 2.9V
- Base Part Number: IR25604SPBF
- Number of Outputs: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Packaging: Tube
- Technology: CMOS
- Length: 5mm
- Power Supplies: 15V
- Output Voltage: 20V
- Part Status: Last Time Buy
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Input Type: Non-Inverting
- Max Output Current: 350mA
- Operating Temperature: -40°C~150°C TJ
- Published: 1996
- Power Dissipation: 625mW
- Subcategory: MOSFET Drivers
- Driven Configuration: Half-Bridge
- Gate Type: IGBT, N-Channel MOSFET
- Turn-Off Delay Time: 280 ns
- Rise Time: 220ns
- Rise / Fall Time (Typ): 150ns 50ns
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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