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- Manufacturer No：SI1302DL-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1302DL-T1-E3
- SKU：270165
- Description：MOSFET N-CH 30V 600MA SOT323-3
User Guide
User Guide
SI1302DL-T1-E3 Details
MOSFET N-CH 30V 600MA SOT323-3
SI1302DL-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Qualification Status: Not Qualified
- REACH SVHC: No SVHC
- Reach Compliance Code: unknown
- Time@Peak Reflow Temperature-Max (s): 40
- Length: 2mm
- Transistor Element Material: SILICON
- Height: 1mm
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Drain Current-Max (Abs) (ID): 0.6A
- Turn-Off Delay Time: 8 ns
- Turn On Delay Time: 5 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Nominal Vgs: 3 V
- Power Dissipation: 310mW
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 600mA Ta
- Rds On (Max) @ Id, Vgs: 480m Ω @ 600mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Published: 2009
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Width: 1.25mm
- Threshold Voltage: 1V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: SC-70, SOT-323
- Rise Time: 8 ns
- Fall Time (Typ): 7 ns
- Series: TrenchFET?
- Continuous Drain Current (ID): 640mA
- Resistance: 480mOhm
- Weight: 6.208546mg
- Power Dissipation-Max: 280mW Ta
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