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- Manufacturer No：IRFB3307ZGPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB3307ZGPBF
- SKU：2702324
- Description：MOSFET N-CH 75V 120A TO-220AB
User Guide
User Guide
IRFB3307ZGPBF Details
MOSFET N-CH 75V 120A TO-220AB
IRFB3307ZGPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Published: 2008
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 75V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Turn On Delay Time: 15 ns
- Series: HEXFET?
- Width: 4.826mm
- Length: 10.668mm
- Current - Continuous Drain (Id) @ 25°C: 120A Tc
- Power Dissipation: 230W
- Vgs(th) (Max) @ Id: 4V @ 150μA
- Drain to Source Resistance: 5.8mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V
- Input Capacitance: 4.75nF
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 75V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Supplier Device Package: TO-220AB
- Height: 16.51mm
- Continuous Drain Current (ID): 120A
- Fall Time (Typ): 65 ns
- Turn-Off Delay Time: 38 ns
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Power Dissipation-Max: 230W Tc
- Resistance: 5.8mOhm
- Rise Time: 64ns
- Rds On Max: 5.8 mΩ
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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