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- Manufacturer No：IRF1405STRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF1405STRLPBF
- SKU：2702364
- Description：MOSFET N-CH 55V 131A D2PAK
User Guide
User Guide
IRF1405STRLPBF Details
MOSFET N-CH 55V 131A D2PAK
IRF1405STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Voltage - Rated DC: 55V
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain Current-Max (Abs) (ID): 75A
- Width: 9.65mm
- Fall Time (Typ): 110 ns
- Turn-Off Delay Time: 130 ns
- Lead Free: Contains Lead, Lead Free
- Power Dissipation-Max: 200W Tc
- Resistance: 5.3mOhm
- Continuous Drain Current (ID): 131A
- Pulsed Drain Current-Max (IDM): 680A
- Avalanche Energy Rating (Eas): 590 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2004
- Power Dissipation: 200W
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 55V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- Turn On Delay Time: 13 ns
- Length: 10.668mm
- Recovery Time: 130 ns
- Rise Time: 190 ns
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Current Rating: 131A
- Height: 5.084mm
- Current - Continuous Drain (Id) @ 25°C: 131A Tc
- Rds On (Max) @ Id, Vgs: 5.3m Ω @ 101A, 10V
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