IRF8302MTRPBFInfineon
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    • Manufacturer No：
      IRF8302MTRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF8302MTRPBF
    • SKU：
      2702623
    • Description：
      MOSFET N-CH 30V 31A MX

    User Guide

    User Guide

    IRF8302MTRPBF Details

    MOSFET N-CH 30V 31A MX

    IRF8302MTRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Factory Lead Time: 12 Weeks
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Terminal Position: BOTTOM
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn-Off Delay Time: 20 ns
    • Threshold Voltage: 1.35V
    • Series: HEXFET?
    • Continuous Drain Current (ID): 31A
    • Rise Time: 37 ns
    • Package / Case: DirectFET? Isometric MX
    • Vgs(th) (Max) @ Id: 2.35V @ 150μA
    • Power Dissipation-Max: 2.8W Ta 104W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 6030pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Number of Terminations: 3
    • Published: 2006
    • Number of Pins: 7
    • Drain to Source Breakdown Voltage: 30V
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 15 ns
    • Height: 700μm
    • Pulsed Drain Current-Max (IDM): 250A
    • Turn On Delay Time: 22 ns
    • Power Dissipation: 2.8W
    • JESD-30 Code: R-XBCC-N3
    • Avalanche Energy Rating (Eas): 260 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 31A Ta 190A Tc
    • Rds On (Max) @ Id, Vgs: 1.8m Ω @ 31A, 10V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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