Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $1.937 $1.937
- 10 $1.917 $19.17
- 100 $1.898 $189.8
- 1000 $1.879 $1879
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IRFH5006TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFH5006TRPBF
- SKU：2703155
- Description：INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
User Guide
User Guide
IRFH5006TRPBF Details
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
IRFH5006TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Terminal Finish: Matte Tin (Sn)
- Published: 2010
- Transistor Element Material: SILICON
- Threshold Voltage: 2V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Height: 990.6μm
- Case Connection: DRAIN
- Turn-Off Delay Time: 30 ns
- Pulsed Drain Current-Max (IDM): 400A
- Rise Time: 13 ns
- Nominal Vgs: 2 V
- Width: 5.15mm
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- JESD-30 Code: R-PDSO-N5
- Length: 6.1468mm
- Current - Continuous Drain (Id) @ 25°C: 21A Ta 100A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 30V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- Peak Reflow Temperature (Cel): 260
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 40
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 12 ns
- Series: HEXFET?
- Package / Case: 8-PowerTDFN
- Power Dissipation: 156W
- Turn On Delay Time: 9.6 ns
- Vgs(th) (Max) @ Id: 4V @ 150μA
- Resistance: 4.1mOhm
- Power Dissipation-Max: 3.6W Ta 156W Tc
- Rds On (Max) @ Id, Vgs: 4.1m Ω @ 50A, 10V
Search for similar products
IRFH5006TRPBF Similar Products
The four parts on the right have similar specifications to Infineon & IRFH5006TRPBF
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
