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  • Manufacturer No:
    IPW60R070C6FKSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPW60R070C6FKSA1
  • SKU:
    2703725
  • Description:
    Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247

IPW60R070C6FKSA1 Details

Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247

IPW60R070C6FKSA1 Specification Parameters

  • Surface Mount: NO
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Pin Count: 3
  • Published: 2008
  • Terminal Finish: Tin (Sn)
  • Factory Lead Time: 2 Weeks
  • DS Breakdown Voltage-Min: 600V
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSFM-T3
  • Series: CoolMOS?
  • Drain-source On Resistance-Max: 0.07Ohm
  • Pulsed Drain Current-Max (IDM): 159A
  • JEDEC-95 Code: TO-247AA
  • Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
  • Rds On (Max) @ Id, Vgs: 70m Ω @ 25.8A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-247-3
  • Drain Current-Max (Abs) (ID): 53A
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 53A Tc
  • Power Dissipation-Max: 391W Tc
  • Avalanche Energy Rating (Eas): 1135 mJ

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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