IRFP3710PBFInfineon
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    • Manufacturer No：
      IRFP3710PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      2704053
    • Description：
      Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.025 Ohm; Id 57A; TO-247AC; Pd 200W; Vgs +/-20V
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    Inventory:12631
    • Qty Unit Price price
    • 1 $2.718 $2.718
    • 10 $2.691 $26.91
    • 100 $2.664 $266.4
    • 1000 $2.637 $2637
    • 10000 $2.61 $26100

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    • Manufacturer No：
      IRFP3710PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFP3710PBF
    • SKU：
      2704053
    • Description：
      Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.025 Ohm; Id 57A; TO-247AC; Pd 200W; Vgs +/-20V

    User Guide

    User Guide

    IRFP3710PBF Details

    Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.025 Ohm; Id 57A; TO-247AC; Pd 200W; Vgs +/-20V

    IRFP3710PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • Case Connection: DRAIN
    • Package / Case: TO-247-3
    • Length: 15.875mm
    • Turn On Delay Time: 14 ns
    • Power Dissipation: 180W
    • Current Rating: 57A
    • Lead Free: Contains Lead, Lead Free
    • Turn-Off Delay Time: 58 ns
    • Recovery Time: 320 ns
    • Rise Time: 59 ns
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 57A Tc
    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Factory Lead Time: 12 Weeks
    • Number of Pins: 3
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Threshold Voltage: 2V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Width: 5.3mm
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Additional Feature: AVALANCHE RATED
    • JEDEC-95 Code: TO-247AC
    • Nominal Vgs: 4 V
    • Continuous Drain Current (ID): 57A
    • Fall Time (Typ): 48 ns
    • Drain-source On Resistance-Max: 0.025Ohm
    • Power Dissipation-Max: 200W Tc
    • Height: 24.99mm
    • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 28A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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