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Inventory:189
  • Qty Unit Price price
  • 1 $4200.921 $4200.921
  • 10 $4159.327 $41593.27
  • 100 $4118.145 $411814.5
  • 1000 $4077.371 $4077371
  • 10000 $4037 $40370000

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  • Manufacturer No:
    IRFP054NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP054NPBF
  • SKU:
    2704671
  • Description:
    MOSFET N-CH 55V 81A TO-247AC

IRFP054NPBF Details

MOSFET N-CH 55V 81A TO-247AC

IRFP054NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn-Off Delay Time: 40 ns
  • Length: 15.87mm
  • Resistance: 12mOhm
  • JEDEC-95 Code: TO-247AC
  • Height: 20.7mm
  • Lead Free: Contains Lead, Lead Free
  • Current Rating: 72A
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
  • Rise Time: 66 ns
  • Pulsed Drain Current-Max (IDM): 290A
  • Continuous Drain Current (ID): 81A
  • Current - Continuous Drain (Id) @ 25°C: 81A Tc
  • RoHS Status: ROHS3 Compliant
  • Packaging: Bulk
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Factory Lead Time: 12 Weeks
  • Number of Pins: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Published: 1997
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Dual Supply Voltage: 55V
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-247-3
  • Series: HEXFET?
  • Turn On Delay Time: 11 ns
  • Recovery Time: 120 ns
  • Nominal Vgs: 4 V
  • Width: 5.3086mm
  • Power Dissipation: 130W
  • Fall Time (Typ): 46 ns
  • Lead Pitch: 5.45mm
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Power Dissipation-Max: 170W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Rds On (Max) @ Id, Vgs: 12m Ω @ 43A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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