IRLR3410TRPBFInfineon
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    • 10 $175.154 $1751.54
    • 100 $173.419 $17341.9
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    • Manufacturer No：
      IRLR3410TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR3410TRPBF
    • SKU：
      2704768
    • Description：
      MOSFET N-CH 100V 17A DPAK

    User Guide

    User Guide

    IRLR3410TRPBF Details

    MOSFET N-CH 100V 17A DPAK

    IRLR3410TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Max Junction Temperature (Tj): 175°C
    • Element Configuration: Single
    • Threshold Voltage: 2V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn-Off Delay Time: 30 ns
    • Current Rating: 17A
    • Width: 6.22mm
    • Vgs(th) (Max) @ Id: 2V @ 250μA
    • Fall Time (Typ): 26 ns
    • Lead Free: Contains Lead, Lead Free
    • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
    • Recovery Time: 210 ns
    • Turn On Delay Time: 7.2 ns
    • Current - Continuous Drain (Id) @ 25°C: 17A Tc
    • Power Dissipation: 79W
    • Additional Feature: AVALANCHE RATED, ULTRA LOW RESISTANCE
    • Rds On (Max) @ Id, Vgs: 105m Ω @ 10A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 100V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Published: 2003
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 60A
    • Series: HEXFET?
    • Continuous Drain Current (ID): 17A
    • JEDEC-95 Code: TO-252AA
    • Nominal Vgs: 2 V
    • Vgs (Max): ±16V
    • Length: 6.7056mm
    • Rise Time: 53 ns
    • Height: 2.52mm
    • Resistance: 105mOhm
    • Power Dissipation-Max: 79W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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