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- Manufacturer No：SI2312CDS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2312CDS-T1-GE3
- SKU：270517
- Description：MOSFET N-CH 20V 6A SOT-23
User Guide
User Guide
SI2312CDS-T1-GE3 Details
MOSFET N-CH 20V 6A SOT-23
SI2312CDS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Published: 2010
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Power Dissipation: 1.25W
- Fall Time (Typ): 8 ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Subcategory: FET General Purpose Powers
- Weight: 1.437803g
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
- Resistance: 31.8mOhm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Threshold Voltage: 1V
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Turn On Delay Time: 8 ns
- Height: 1.12mm
- Rise Time: 17 ns
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Turn-Off Delay Time: 31 ns
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Power Dissipation-Max: 1.25W Ta 2.1W Tc
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