IRF5210PBFInfineon
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    Inventory:7637
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    • 100 $394.78 $39478
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    • Manufacturer No：
      IRF5210PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF5210PBF
    • SKU：
      2705353
    • Description：
      MOSFET P-CH 100V 40A TO-220AB

    User Guide

    User Guide

    IRF5210PBF Details

    MOSFET P-CH 100V 40A TO-220AB

    IRF5210PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Power Dissipation: 200W
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • Subcategory: Other Transistors
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Turn On Delay Time: 17 ns
    • Voltage - Rated DC: -100V
    • Dual Supply Voltage: -100V
    • Recovery Time: 260 ns
    • Width: 4.69mm
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Turn-Off Delay Time: 79 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    • Nominal Vgs: -4 V
    • Avalanche Energy Rating (Eas): 780 mJ
    • Current Rating: -40A
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Lead Pitch: 2.54mm
    • Drain to Source Voltage (Vdss): 100V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Package / Case: TO-220-3
    • Case Connection: DRAIN
    • FET Type: P-Channel
    • Peak Reflow Temperature (Cel): 250
    • Resistance: 60mOhm
    • Height: 19.8mm
    • Drain to Source Breakdown Voltage: -100V
    • Threshold Voltage: -4V
    • Current - Continuous Drain (Id) @ 25°C: 40A Tc
    • Power Dissipation-Max: 200W Tc
    • Length: 10.5156mm
    • Fall Time (Typ): 81 ns
    • Rise Time: 86 ns
    • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
    • Continuous Drain Current (ID): -40A
    • Rds On (Max) @ Id, Vgs: 60m Ω @ 24A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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