IRF7328TRPBFInfineon
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    • 10 $270.971 $2709.71
    • 100 $268.288 $26828.8
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    • Manufacturer No：
      IRF7328TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7328TRPBF
    • SKU：
      2705389
    • Description：
      MOSFET 2P-CH 30V 8A 8-SOIC

    User Guide

    User Guide

    IRF7328TRPBF Details

    MOSFET 2P-CH 30V 8A 8-SOIC

    IRF7328TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Element Configuration: Dual
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Current - Continuous Drain (Id) @ 25°C: 8A
    • Transistor Application: SWITCHING
    • Subcategory: Other Transistors
    • Rise Time: 15 ns
    • Series: HEXFET?
    • FET Feature: Logic Level Gate
    • Drain to Source Breakdown Voltage: -30V
    • Dual Supply Voltage: -30V
    • Resistance: 21mOhm
    • Length: 4.9784mm
    • Additional Feature: ULTRA LOW RESISTANCE
    • Fall Time (Typ): 98 ns
    • Continuous Drain Current (ID): -8A
    • Nominal Vgs: -2.5 V
    • Turn-Off Delay Time: 198 ns
    • Base Part Number: IRF7328PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Drain Current-Max (Abs) (ID): 8A
    • Height: 1.75mm
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Width: 3.9878mm
    • Turn On Delay Time: 13 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Voltage - Rated DC: -30V
    • FET Type: 2 P-Channel (Dual)
    • Threshold Voltage: -1V
    • Recovery Time: 56 ns
    • Row Spacing: 6.3 mm
    • Current Rating: -8A
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Rds On (Max) @ Id, Vgs: 21m Ω @ 8A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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