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- Manufacturer No：IRF7855PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7855PBF
- SKU：2705395
- Description：N-Channel 60 V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
User Guide
User Guide
IRF7855PBF Details
N-Channel 60 V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
IRF7855PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 8
- REACH SVHC: No SVHC
- Factory Lead Time: 14 Weeks
- Published: 2005
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 12A
- Recovery Time: 50 ns
- Width: 3.9878mm
- Series: HEXFET?
- Threshold Voltage: 4.9V
- Turn On Delay Time: 8.7 ns
- Rise Time: 13ns
- Current - Continuous Drain (Id) @ 25°C: 12A Ta
- Vgs(th) (Max) @ Id: 4.9V @ 100μA
- Rds On (Max) @ Id, Vgs: 9.4m Ω @ 12A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Packaging: Tube
- Drain to Source Breakdown Voltage: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Discontinued
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Fall Time (Typ): 12 ns
- Height: 1.4986mm
- Turn-Off Delay Time: 16 ns
- Power Dissipation-Max: 2.5W Ta
- Length: 4.9784mm
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Resistance: 9.4mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
- Power Dissipation: 97mW
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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