IRF3205STRLPBFInfineon
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    • Manufacturer No：
      IRF3205STRLPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF3205STRLPBF
    • SKU：
      2706106
    • Description：
      MOSFET N-CH 55V 110A D2PAK

    User Guide

    User Guide

    IRF3205STRLPBF Details

    MOSFET N-CH 55V 110A D2PAK

    IRF3205STRLPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Turn On Delay Time: 14 ns
    • Current Rating: 110A
    • Fall Time (Typ): 65 ns
    • Nominal Vgs: 4 V
    • Width: 10.54mm
    • Current - Continuous Drain (Id) @ 25°C: 110A Tc
    • Recovery Time: 104 ns
    • Height: 5.084mm
    • Avalanche Energy Rating (Eas): 264 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 3
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2001
    • Power Dissipation: 200W
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Voltage - Rated DC: 55V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 50 ns
    • Drain Current-Max (Abs) (ID): 75A
    • Resistance: 8mOhm
    • JEDEC-95 Code: TO-252
    • Continuous Drain Current (ID): 110A
    • Length: 10.668mm
    • Lead Free: Contains Lead, Lead Free
    • Power Dissipation-Max: 200W Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    • Rise Time: 101 ns
    • Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
    • Rds On (Max) @ Id, Vgs: 8m Ω @ 62A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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