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  • Manufacturer No:
    IRFZ24NPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2706553
  • Description:
    Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB
  • Quantity:
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Inventory:0
  • Qty Unit Price price
  • 1 $1003.145 $1003.145
  • 10 $993.212 $9932.12
  • 100 $983.378 $98337.8
  • 1000 $973.641 $973641
  • 10000 $964 $9640000

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  • Manufacturer No:
    IRFZ24NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFZ24NPBF
  • SKU:
    2706553
  • Description:
    Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB

IRFZ24NPBF Details

Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB

IRFZ24NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Lead Pitch: 2.54mm
  • Max Junction Temperature (Tj): 175°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Current Rating: 17A
  • Additional Feature: AVALANCHE RATED
  • Turn-Off Delay Time: 19 ns
  • Height: 19.8mm
  • Nominal Vgs: 4 V
  • Rise Time: 34 ns
  • Pulsed Drain Current-Max (IDM): 68A
  • Current - Continuous Drain (Id) @ 25°C: 17A Tc
  • Length: 10.5156mm
  • Rds On (Max) @ Id, Vgs: 70m Ω @ 10A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Threshold Voltage: 2V
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Dual Supply Voltage: 55V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Series: HEXFET?
  • Continuous Drain Current (ID): 17A
  • Resistance: 70mOhm
  • Power Dissipation: 45W
  • Fall Time (Typ): 27 ns
  • Turn On Delay Time: 4.9 ns
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Power Dissipation-Max: 45W Tc
  • Width: 4.69mm
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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