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- Manufacturer No：IRFP4229PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP4229PBF
- SKU：2706557
- Description：N-Channel 250 V 44A (Tc) 310W (Tc) Through Hole TO-247AC
User Guide
User Guide
IRFP4229PBF Details
N-Channel 250 V 44A (Tc) 310W (Tc) Through Hole TO-247AC
IRFP4229PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Threshold Voltage: 5V
- Packaging: Tube
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 250V
- Published: 2006
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Rise Time: 27 ns
- Operating Temperature: -40°C~175°C TJ
- Height: 20.7mm
- Turn-Off Delay Time: 44 ns
- Power Dissipation: 310mW
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 44A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Dual Supply Voltage: 250V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- Turn On Delay Time: 25 ns
- Package / Case: TO-247-3
- Length: 15.87mm
- Fall Time (Typ): 19 ns
- JEDEC-95 Code: TO-247AC
- Nominal Vgs: 5 V
- Width: 5.3086mm
- Continuous Drain Current (ID): 44A
- Resistance: 46mOhm
- Recovery Time: 290 ns
- Power Dissipation-Max: 310W Tc
- Rds On (Max) @ Id, Vgs: 46m Ω @ 26A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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