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  • Manufacturer No:
    IRFP064NPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2706812
  • Description:
    In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF
  • Quantity:
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Inventory:99
  • Qty Unit Price price
  • 1 $3982.394 $3982.394
  • 10 $3942.964 $39429.64
  • 100 $3903.924 $390392.4
  • 1000 $3865.271 $3865271
  • 10000 $3827 $38270000

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  • Manufacturer No:
    IRFP064NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP064NPBF
  • SKU:
    2706812
  • Description:
    In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

IRFP064NPBF Details

In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

IRFP064NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Max Junction Temperature (Tj): 175°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Published: 1997
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Dual Supply Voltage: 55V
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Rise Time: 100 ns
  • Series: HEXFET?
  • Resistance: 8mOhm
  • Current Rating: 110A
  • JEDEC-95 Code: TO-247AC
  • Turn-Off Delay Time: 43 ns
  • Lead Pitch: 5.45mm
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Height: 24.99mm
  • Drain Current-Max (Abs) (ID): 98A
  • Avalanche Energy Rating (Eas): 480 mJ
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Power Dissipation: 150W
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Width: 5.3mm
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-247-3
  • Fall Time (Typ): 70 ns
  • Length: 15.875mm
  • Turn On Delay Time: 14 ns
  • Continuous Drain Current (ID): 110A
  • Nominal Vgs: 4 V
  • Recovery Time: 170 ns
  • Power Dissipation-Max: 200W Tc
  • Current - Continuous Drain (Id) @ 25°C: 110A Tc
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Rds On (Max) @ Id, Vgs: 8m Ω @ 59A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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