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  • Manufacturer No:
    SI7850DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    270699
  • Description:
    MOSFET N-CH 60V 6.2A PPAK SO-8
  • Quantity:
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Inventory:11542
  • Qty Unit Price price
  • 1 $1.844 $1.844
  • 10 $1.825 $18.25
  • 100 $1.806 $180.6
  • 1000 $1.788 $1788
  • 10000 $1.77 $17700

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  • Manufacturer No:
    SI7850DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7850DP-T1-E3
  • SKU:
    270699
  • Description:
    MOSFET N-CH 60V 6.2A PPAK SO-8

SI7850DP-T1-E3 Details

MOSFET N-CH 60V 6.2A PPAK SO-8

SI7850DP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Drain to Source Breakdown Voltage: 60V
  • Number of Terminations: 5
  • Max Junction Temperature (Tj): 150°C
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Terminal Form: FLAT
  • Length: 4.9mm
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Rise Time: 10ns
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • JESD-30 Code: R-PDSO-F5
  • Power Dissipation: 1.8W
  • Nominal Vgs: 3 V
  • Resistance: 22mOhm
  • Package / Case: PowerPAK? SO-8
  • Power Dissipation-Max: 1.8W Ta
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Manufacturer Package Identifier: S17-0173-Single
  • Rds On (Max) @ Id, Vgs: 22m Ω @ 10.3A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Pin Count: 8
  • Termination: SMD/SMT
  • Dual Supply Voltage: 60V
  • Threshold Voltage: 3V
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 40A
  • Case Connection: DRAIN
  • Fall Time (Typ): 10 ns
  • Turn-Off Delay Time: 25 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: TrenchFET?
  • Continuous Drain Current (ID): 6.2A
  • Turn On Time-Max (ton): 40ns
  • Height: 1.17mm
  • Width: 5.89mm
  • Current - Continuous Drain (Id) @ 25°C: 6.2A Ta
  • Turn Off Time-Max (toff): 74ns

Excellent

Based on reviews

Excellent

Based on reviews

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