Add to like
Add to project list
Inventory:11570
  • Qty Unit Price price
  • 1 $184.189 $184.189
  • 10 $182.365 $1823.65
  • 100 $180.559 $18055.9
  • 1000 $178.771 $178771
  • 10000 $177 $1770000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    IRFR4105TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR4105TRPBF
  • SKU:
    2708361
  • Description:
    MOSFET N-CH 55V 27A DPAK

IRFR4105TRPBF Details

MOSFET N-CH 55V 27A DPAK

IRFR4105TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Current Rating: 25A
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mount: Surface Mount, Through Hole
  • Series: HEXFET?
  • JEDEC-95 Code: TO-252AA
  • Continuous Drain Current (ID): 27A
  • Height: 2.3876mm
  • Width: 2.38mm
  • Length: 6.7056mm
  • Rise Time: 49 ns
  • Power Dissipation-Max: 68W Tc
  • Recovery Time: 86 ns
  • Additional Feature: AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Rds On (Max) @ Id, Vgs: 45m Ω @ 16A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Published: 2005
  • Element Configuration: Single
  • Drain Current-Max (Abs) (ID): 20A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Dual Supply Voltage: 55V
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Fall Time (Typ): 40 ns
  • Turn On Delay Time: 7 ns
  • Resistance: 45mOhm
  • Nominal Vgs: 4 V
  • Lead Free: Contains Lead, Lead Free
  • Power Dissipation: 48W
  • Turn-Off Delay Time: 31 ns
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 27A Tc
  • Avalanche Energy Rating (Eas): 65 mJ

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via