IRF7406TRPBFInfineon
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    • Manufacturer No：
      IRF7406TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7406TRPBF
    • SKU：
      2708975
    • Description：
      MOSFET P-CH 30V 5.8A 8-SOIC

    User Guide

    User Guide

    IRF7406TRPBF Details

    MOSFET P-CH 30V 5.8A 8-SOIC

    IRF7406TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 23A
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Width: 3.9878mm
    • Turn-Off Delay Time: 45 ns
    • Drain to Source Breakdown Voltage: -30V
    • Dual Supply Voltage: -30V
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Threshold Voltage: -1V
    • Length: 4.9784mm
    • Recovery Time: 63 ns
    • Row Spacing: 6.3 mm
    • Nominal Vgs: -1 V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A Ta
    • Current Rating: -5.8A
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Max Junction Temperature (Tj): 150°C
    • Element Configuration: Single
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Height: 1.75mm
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Power Dissipation: 2.5W
    • FET Type: P-Channel
    • Series: HEXFET?
    • Turn On Delay Time: 16 ns
    • Voltage - Rated DC: -30V
    • Resistance: 45mOhm
    • Rise Time: 33 ns
    • Power Dissipation-Max: 2.5W Ta
    • Fall Time (Typ): 47 ns
    • Additional Feature: ULTRA LOW RESISTANCE
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Continuous Drain Current (ID): -5.8A
    • Rds On (Max) @ Id, Vgs: 45m Ω @ 2.8A, 10V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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