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- Manufacturer No：IPP80N06S2L07AKSA2
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPP80N06S2L07AKSA2
- SKU：2708994
- Description：MOSFET N-CH 55V 80A TO220-3
User Guide
User Guide
IPP80N06S2L07AKSA2 Details
MOSFET N-CH 55V 80A TO220-3
IPP80N06S2L07AKSA2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Factory Lead Time: 10 Weeks
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Drain-source On Resistance-Max: 0.01Ohm
- Avalanche Energy Rating (Eas): 450 mJ
- Rds On (Max) @ Id, Vgs: 7m Ω @ 60A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Published: 2006
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Max Dual Supply Voltage: 55V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID): 80A
- Series: OptiMOS?
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Power Dissipation-Max: 210W Tc
- Vgs(th) (Max) @ Id: 2V @ 150μA
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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