IRFB4110PBFInfineon
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    • Manufacturer No：
      IRFB4110PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      2710000
    • Description：
      MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
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    Inventory:3350
    • Qty Unit Price price
    • 1 $725.304 $725.304
    • 10 $718.122 $7181.22
    • 100 $711.011 $71101.1
    • 1000 $703.971 $703971
    • 10000 $697 $6970000

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    • Manufacturer No：
      IRFB4110PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB4110PBF
    • SKU：
      2710000
    • Description：
      MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

    User Guide

    User Guide

    IRFB4110PBF Details

    MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

    IRFB4110PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Width: 4.826mm
    • Current Rating: 180A
    • Current - Continuous Drain (Id) @ 25°C: 120A Tc
    • Turn-Off Delay Time: 78 ns
    • Fall Time (Typ): 88 ns
    • Drain-source On Resistance-Max: 0.0045Ohm
    • Power Dissipation-Max: 370W Tc
    • Rds On (Max) @ Id, Vgs: 4.5m Ω @ 75A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 25 ns
    • Height: 16.51mm
    • Recovery Time: 75 ns
    • Continuous Drain Current (ID): 180A
    • Nominal Vgs: 4 V
    • Length: 10.66mm
    • Rise Time: 67 ns
    • Power Dissipation: 370W
    • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
    • Pulsed Drain Current-Max (IDM): 670A
    • Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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