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- Manufacturer No：SI1926DL-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1926DL-T1-E3
- SKU：271025
- Description：MOSFET 60V 0.37A 0.51W
User Guide
User Guide
SI1926DL-T1-E3 Details
MOSFET 60V 0.37A 0.51W
SI1926DL-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 60V
- Published: 2015
- Factory Lead Time: 14 Weeks
- Element Configuration: Dual
- Height: 1mm
- Width: 1.25mm
- Transistor Application: SWITCHING
- Power Dissipation: 300mW
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 12 ns
- Turn-Off Delay Time: 13 ns
- Turn On Delay Time: 6.5 ns
- Resistance: 1.4Ohm
- Series: TrenchFET?
- Drain Current-Max (Abs) (ID): 0.34A
- Max Power Dissipation: 510mW
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
- Base Part Number: SI1926
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 60V
- Threshold Voltage: 2.5V
- Time@Peak Reflow Temperature-Max (s): 40
- Length: 2mm
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 12 ns
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Continuous Drain Current (ID): 370mA
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- FET Type: 2 N-Channel (Dual)
- Weight: 28.009329mg
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Rds On (Max) @ Id, Vgs: 1.4 Ω @ 340mA, 10V
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