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- Manufacturer No：IRFR5305TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR5305TRPBF
- SKU：2710442
- Description：MOSFET P-CH 55V 31A DPAK
User Guide
User Guide
IRFR5305TRPBF Details
MOSFET P-CH 55V 31A DPAK
IRFR5305TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2000
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Max Dual Supply Voltage: 55V
- JESD-30 Code: R-PSSO-G2
- Length: 6.73mm
- FET Type: P-Channel
- Series: HEXFET?
- Turn On Delay Time: 14 ns
- Recovery Time: 110 ns
- Power Dissipation: 110W
- Turn-Off Delay Time: 39 ns
- Threshold Voltage: -4V
- Fall Time (Typ): 63 ns
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 31A Tc
- Voltage - Rated DC: -55V
- Avalanche Energy Rating (Eas): 280 mJ
- Rds On (Max) @ Id, Vgs: 65m Ω @ 16A, 10V
- Current Rating: -31A
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Height: 2.39mm
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 6.22mm
- JEDEC-95 Code: TO-252AA
- Resistance: 65mOhm
- Lead Free: Contains Lead, Lead Free
- Power Dissipation-Max: 110W Tc
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
- Rise Time: 66 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Drain to Source Breakdown Voltage: -55V
- Dual Supply Voltage: -55V
- Nominal Vgs: -4 V
- Continuous Drain Current (ID): -31A
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