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- Manufacturer No：IRF5210STRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF5210STRLPBF
- SKU：2710463
- Description：MOSFET P-CH 100V 38A D2PAK
User Guide
User Guide
IRF5210STRLPBF Details
MOSFET P-CH 100V 38A D2PAK
IRF5210STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Dual Supply Voltage: 100V
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Case Connection: DRAIN
- FET Type: P-Channel
- Series: HEXFET?
- Width: 9.65mm
- Turn On Delay Time: 14 ns
- Voltage - Rated DC: -100V
- Power Dissipation: 3.8W
- Recovery Time: 260 ns
- Current - Continuous Drain (Id) @ 25°C: 38A Tc
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Additional Feature: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Current Rating: -40A
- Power Dissipation-Max: 3.1W Ta 170W Tc
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Lead Free: Contains Lead
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Height: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- Published: 1998
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 60mOhm
- Fall Time (Typ): 55 ns
- Length: 10.668mm
- Drain to Source Breakdown Voltage: -100V
- Threshold Voltage: -4V
- Turn-Off Delay Time: 72 ns
- Nominal Vgs: -4 V
- Rise Time: 63ns
- Continuous Drain Current (ID): -40A
- Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
- Rds On (Max) @ Id, Vgs: 60m Ω @ 38A, 10V
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